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MMBZ6V8DC/A thru MMBZ27VDC/A
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual Zener Transient Voltage Suppressor Diodes for ESD Protection
.122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33)
TO-236AB (SOT-23) Mounting Pad Layout
Top View
0.031 (0.8)
0.035 (0.9) 0.079 (2.0)
1
2 max. .004 (0.1)
Dimensions in inches and (millimeters)
.007 (0.175) .005 (0.125)
.037(0.95) .037(0.95)
0.037 (0.95)
.045 (1.15) .037 (0.95)
0.037 (0.95)
Marking:
MMBZ15VDC = TC5 MMBZ27VDC = TC7 MMBZ6V8DC = ? MMBZ15VDA = TA5 MMBZ27VDA = TA7 MMBZ6V8DA = ?
.016 (0.4)
.016 (0.4)
.102 (2.6) .094 (2.4)
MMBZ15VDC MMBZ27VDC
MMBZ15VDA MMBZ27VDA
Features
* Dual Silicon Planar Zener Diodes with Common Cathode or Common Anode configurations. * Dual package provides for Bidirectional or separate unidirectional configurations. * The dual configurations protect two separate lines with only one device. * Peak Power: 40 watts @1ms (Bidirectional) . * High temperature Soldering Guaranteed: 230C for 10 seconds. * Ideal for ESD Protection. * For bidirectional operation, circuit connected to pins 1 and 2. For unidirectional operation, circuit connected to pins 1 and 3 or pins 2 and 3.
(TA = 25C unless otherwise noted)
Top View
Common Cathode Common Anode
Mechanical Data
Case: SOT-23 Plastic Package Weight: approx. 0.008g Terminals: Solderable per MIL-STD-750, method 2026 Packaging Codes/Options: E8/10K per 13" reel (8mm tape) E9/3K per 7" reel (8mm tape)
Maximum Ratings and Thermal Characteristics
Parameter Peak Power Dissipation Total Power Dissipation on FR-5 Board(2) Total Power Dissipation on Alumina Substrate(3)
(1)
Symbol @ TA 25C at TA = 25C Derate above 25C at TA = 25C Derate above 25C Ppk PD PD RJA TJ, Tstg
Value 40
(4)
Unit W mW mW/C mW mW/C C/W C
225 1.8 300 2.4 556 -55 to +150
Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Range
Notes: (1) Nonrepetitive current pulse per Figure 2 and derate above TA = 25C per Figure 3. (2) FR-5 = 1.0 x 0.75 x 0.62 in. (3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina. (4) The MMBZ6V8DC/A is rated at 24V
Document Number 88358 21-May-02
www.vishay.com 1
MMBZ6V8DC/A thru MMBZ27VDC/A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Breakdown Voltage VBR (Volts)(1) Type MMBZ6V8D MMBZ15VD MMBZ27VD Min 6.48 14.30 25.65 Nom 6.8 15.00 27.00 Max 7.14 15.80 28.35
(TJ = 25C unless otherwise noted)
@IT mA 1.0 1.0 1.0
Max Forward Max Reverse Working Voltage Voltage Peak Max Max (2) @ IRSM Max Reverse Reverse Reverse (Clamping Voltage) Temperature Voltage Leakage Surge VC @IF Coefficient of VF VRWM Current IR Current IPP (Volts) VBR (mV/C) (Volts) (mA) (Volts) (nA) (Amps) 4.5 12.8 22.0 500 100 80 2.5 1.9 1.0 9.6 21.2 38.0 3.4 16 30 1.1 0.9 1.1 200 200 200
Notes: (1) VBR measured at pulse test current IT at an ambient temperature of 25C (2) Surge current waveform per Figure 2 and derate per Figure 3
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
FIG. 1 - STEADY STATE POWER DERATING CURVE
Layout for RJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in. (0.3mm)
0.30 (7.5) 0.12 (3)
300
250
PD, POWER DISSIPATION (mW) ALUMINA SUBSTRATE
200
150
FR-5 BOARD
.04 (1)
.08 (2) .04 (1) .08 (2)
100
0.59 (15) 0.47 (12)
0.03 (0.8)
50
0.2 (5)
0
0
25
50
75
100
125
150
175
T, Temperature (C) Dimensions in inches (millimeters)
0.06 (1.5) 0.20 (5.1)
FIG. 2 - PULSE WAVEFORM
PULSE WIDTH (tp) is DEFINED as that POINT WHERE the PEAK CURRENT DECAYS to 50% of IRSM tr10s PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA=25Z(C)
FIG. 3 - PULSE DERATING CURVE
100
tr PEAK VALUE - IRSM
75
100
VALUE(%) HALF VALUE - IRSM 2
50
50
tp
25
0
0
1
2
3
t, TIME (ms)
4
0
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (C)
www.vishay.com 2
Document Number 88358 21-May-02

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